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| SI2311DS New Product Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) -8 FEATURES D TrenchFETr Power MOSFET ID (A) -3.5 -2.8 -2.0 rDS(on) (W) 0.045 @ VGS = -4.5 V 0.072 @ VGS = -2.5 V 0.120 @ VGS = -1.8 V APPLICATIONS D Load Switch TO-236 (SOT-23) G 1 3 S 2 D Top View SI2311DS (C1)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b _ Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipation)a, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 5 sec -8 "8 -3.5 -2.8 -10 -0.8 0.96 0.62 Steady State Unit V -3.0 -2.4 A -0.6 0.71 0.46 -55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (drain) Notes a. Surface Mounted on FR4 Board. b. Pulse width limited by maximum junction temperature. Document Number: 71813 S-05831--Rev. A, 04-Mar-02 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 100 140 60 Maximum 130 175 75 Unit _C/W C/W 1 SI2311DS Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0 V, ID = -10 mA VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "8 V VDS = -6.4 V, VGS = 0 V VDS = -6.4 V, VGS = 0 V, TJ = 55_C VDS v -5 V, VGS = -4.5 V ID(on) VDS v -5 V, VGS = -2.5 V VGS = -4.5 V, ID = -3.5 A Drain-Source On-Resistancea rDS(on) VGS = -2.5 V, ID = -3 A VGS = -1.8 V, ID = -0.7 A Forward Transconductancea Diode Forward Voltage gfs VSD VDS = -5 V, ID = -3.5 A IS = -0.8 A, VGS = 0 V -6 -3 0.036 0.058 0.096 9.0 -1.2 0.045 0.072 0.120 S V W A -8 -0.45 -0.8 "100 -1 -10 mA m V nA Symbol Test Conditions Min Typ Max Unit On-State Drain Currenta Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Ciss Coss Crss VDS = -4 V, VGS = 0, f = 1 MHz VDS = -4 V, VGS = -4.5 V ID ^ -3.5 A 8.5 1.5 2.1 970 485 160 pF 12 nC Switchingb td(on) Turn-On Time tr td(off) tf Notes a. b. c. For DESIGN AID ONLY, not subject to production testing. Pulse test: PW v300 ms duty cycle v2%. Switching time is essentially independent of operating temperature. VDD = -4 V, RL = 4 W ID ^ -1.0 A, VGEN = -4.5 V RG = 6 W 18 45 40 45 25 65 ns 60 65 Turn-Off Time www.vishay.com 2 Document Number: 71813 S-05831--Rev. A, 04-Mar-02 SI2311DS New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 12 VGS = 4.5 thru 2.5 V 10 10 25_C I D - Drain Current (A) 8 I D - Drain Current (A) 2V 8 125_C 6 12 TC = -55_C Vishay Siliconix Transfer Characteristics 6 1.5 V 4 4 2 1, 0.5 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 2 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.30 1500 Capacitance r DS(on) - On-Resistance ( W ) 0.25 C - Capacitance (pF) 1250 Ciss 1000 0.20 VGS = 1.8 V 0.15 750 Coss 0.10 VGS = 2.5 V 500 0.05 VGS = 4.5 V 0.00 0 2 4 6 8 10 12 250 Crss 0 0 2 4 6 8 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 8 V GS - Gate-to-Source Voltage (V) VDS = 4 V ID = 3.5 A 6 1.4 On-Resistance vs. Junction Temperature r DS(on) - On-Resistance (W) (Normalized) VGS = 4.5 V ID = 3.5 A 1.2 4 1.0 2 0.8 0 0 2 4 6 8 10 12 14 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 71813 S-05831--Rev. A, 04-Mar-02 www.vishay.com 3 SI2311DS Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 10 r DS(on) - On-Resistance ( W ) 0.4 0.5 On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) TJ = 150_C 1 0.3 0.2 ID = 3.5 A 0.1 0.1 TJ = 25_C 0.01 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0.0 0 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.4 ID = 250 mA 8 10 Single Pulse Power 0.3 V GS(th) Variance (V) 0.2 Power (W) 6 0.1 4 TA = 25_C 0.0 2 -0.1 -0.2 -50 -25 0 25 50 75 100 125 150 0 0.01 0.1 1 Time (sec) 10 100 1000 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 140_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 500 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 71813 S-05831--Rev. A, 04-Mar-02 |
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